| CPC H10N 70/8613 (2023.02) [H10N 70/021 (2023.02); H10N 70/231 (2023.02); H10N 70/823 (2023.02); H10N 70/841 (2023.02)] | 4 Claims |
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1. A method of forming a switching device, the method comprising:
providing a substrate comprising a main surface;
forming a layer of thermally insulating material on the main surface;
forming one or more strips of phase change material on the layer of thermally insulating material such that the one or more strips of phase change material are separated from the main surface by a region of the thermally insulating material;
forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the one or more strips of phase change material; and
forming a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material,
wherein each of the one or more strips of phase change material comprises a first outer face and a second outer face opposite from the first outer face, and
wherein for at least one of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements,
wherein forming the sections of the one or more heating elements comprises depositing a plurality of layers of heating element material that are stacked on top of one another in a vertical direction that is perpendicular to the main surface, and wherein forming the plurality of the strips of phase change material comprises depositing layers of the phase change material alternatingly between the of layers of heating element material.
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