forming a vertical stack of alternating first and second levels; the first levels comprising a first material, and the second levels comprising a second material;

forming an opening to extend through the stack;

recessing the second levels relative to the first levels to form recessed second levels; the first levels having projecting terminal ends extending beyond the recessed second levels; cavities being along the recessed second levels and vertically between the projecting terminal ends;

forming a third material to extend around the projecting terminal ends and within the cavities, the third material narrowing the cavities;

forming a fourth material within the narrowed cavities;

removing regions of the third material to leave projecting structures along the second levels, the projecting structures comprising the fourth material; the projecting structures being vertically spaced from the projecting terminal ends by intervening gaps;

forming an additional first material to extend around the projecting terminal ends and around the projecting structures, and to extend into the intervening gaps;

converting most of the additional first material to a charge-blocking material, regions of the additional first material within the intervening gaps being non-converted regions; the non-converted regions being directly adjacent surfaces of the projecting terminal ends; the charge-blocking material extending vertically through the stack and having an edge with an undulating topography which defines pockets along the first levels;

forming a charge-storage material within the pockets; the charge-storage material and the charge-blocking material together forming a substantially flat surface;

forming a dielectric material along the substantially flat surface;

forming a channel material adjacent the dielectric material;

removing the first material of the first levels and the non-converted regions to leave voids; and

forming a conductive material within the voids.