US 12,155,177 B2
External resonator-type semiconductor laser device
Yujin Zheng, Hamamatsu (JP); Takashi Sekine, Hamamatsu (JP); Yoshinori Kato, Hamamatsu (JP); Norio Kurita, Hamamatsu (JP); and Toshiyuki Kawashima, Hamamatsu (JP)
Assigned to HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
Appl. No. 17/265,983
Filed by HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
PCT Filed May 31, 2019, PCT No. PCT/JP2019/021831
§ 371(c)(1), (2) Date Feb. 4, 2021,
PCT Pub. No. WO2020/031475, PCT Pub. Date Feb. 13, 2020.
Claims priority of application No. 2018-149327 (JP), filed on Aug. 8, 2018.
Prior Publication US 2021/0313769 A1, Oct. 7, 2021
Int. Cl. H01S 5/00 (2006.01); H01S 3/08 (2023.01); H01S 3/1055 (2006.01); H01S 5/0239 (2021.01); H01S 5/14 (2006.01); H01S 5/40 (2006.01); H01S 5/065 (2006.01)
CPC H01S 5/147 (2013.01) [H01S 3/08013 (2013.01); H01S 3/1055 (2013.01); H01S 5/0239 (2021.01); H01S 5/141 (2013.01); H01S 5/4012 (2013.01); H01S 5/0654 (2013.01)] 4 Claims
OG exemplary drawing
 
1. An external resonator-type semiconductor laser device comprising:
an external resonator formed of one or a plurality of laser diode light sources and a VBG;
an optical fiber configured to output an output light from the laser diode light source toward the VBG, and to input a return light from the VBG; and
a displacement unit configured to displace a disposition position of the VBG with respect to an input and output end surface of the output light and the return light in the optical fiber.