US 12,155,019 B2
Light-emitting device
Hsin-Ying Wang, Hsinchu (TW); Chih-Hao Chen, Hsinchu (TW); Chien-Chih Liao, Hsinchu (TW); Chao-Hsing Chen, Hsinchu (TW); Wu-Tsung Lo, Hsinchu (TW); Tsun-Kai Ko, Hsinchu (TW); and Chen Ou, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Aug. 3, 2023, as Appl. No. 18/230,119.
Application 18/230,119 is a continuation of application No. 17/306,136, filed on May 3, 2021, granted, now 11,757,077.
Claims priority of provisional application 63/019,948, filed on May 4, 2020.
Prior Publication US 2023/0395765 A1, Dec. 7, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/60 (2010.01); H01L 21/78 (2006.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/54 (2010.01); H01L 33/56 (2010.01)
CPC H01L 33/60 (2013.01) [H01L 21/78 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer;
an insulating reflective structure covering the semiconductor stack, comprising a first insulating reflective structure opening and a second insulating reflective structure opening;
a first contact electrode formed under the insulating reflective structure, and comprising a first bonding layer and a first conductive layer;
a first electrode pad formed on the first insulating reflective structure opening of the insulating reflective structure; and
a second electrode pad formed on the second insulating reflective structure opening of the insulating reflective structure,
wherein the first bonding layer comprises a first recess, and the first bonding layer comprises one part having a first thickness formed under the first recess and contacting the first conductive layer, and another part having a second thickness larger than the first thickness and surrounding the first recess and contacting the first conductive layer,
wherein the first recess comprises a first step difference smaller than a thickness of the insulating reflective structure, and
wherein the first insulating reflective structure opening comprises a first sidewall connected to the first bonding layer, and the first sidewall of the first insulating reflective structure opening and a sidewall of the first recess are separated with a minimum distance in a lateral direction perpendicular to the stacking direction of the semiconductor stack.