	US 12,154,990 B2
	GaN/two-dimensional AlN heterojunction rectifier on silicon substrate and preparation method therefor
Wenliang Wang, Guangzhou (CN); Guoqiang Li, Guangzhou (CN); Yuhui Yang, Guangzhou (CN); Deqi Kong, Guangzhou (CN); and Zhiheng Xing, Guangzhou (CN)
Assigned to SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou (CN)
Appl. No. 17/789,789
Filed by SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou (CN)
PCT Filed Jul. 7, 2020, PCT No. PCT/CN2020/100510 § 371(c)(1), (2) Date Jun. 29, 2022, PCT Pub. No. WO2021/217875, PCT Pub. Date Nov. 4, 2021.
Claims priority of application No. 202010346191.2 (CN), filed on Apr. 27, 2020.
Prior Publication US 2023/0030977 A1, Feb. 2, 2023
Int. Cl. H01L 29/872 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01)

CPC H01L 29/872 (2013.01) [H01L 21/02057 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02631 (2013.01); H01L 21/28581 (2013.01); H01L 21/31111 (2013.01); H01L 21/32136 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/475 (2013.01); H01L 29/66212 (2013.01); H01L 29/66219 (2013.01)]

18 Claims

1. A GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate, comprising a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer and a SiN_xpassivation layer that are stacked in sequence, and further comprising a mesa isolation groove and a Schottky contact electrode that are arranged at one side of the non-doped InGaN layer, wherein the mesa isolation groove is in contact with the non-doped GaN layer, the non-doped InGaN layer, the SiN_xpassivation layer and the Schottky contact electrode, and the Schottky contact electrode is in contact with the mesa isolation groove and the non-doped GaN layer.