| CPC H01L 29/7869 (2013.01) [H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] | 8 Claims |
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1. A semiconductor device comprising a thin-film transistor, the thin-film transistor comprising:
an oxide semiconductor layer;
a gate insulating layer;
a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer;
a source electrode in contact with the oxide semiconductor layer;
a drain electrode in contact with the oxide semiconductor layer; and
n (n is a natural number) metal layer(s) in contact with the oxide semiconductor layer and disposed across the oxide semiconductor layer between the source electrode and the drain electrode, wherein
the oxide semiconductor layer has n low resistance region(s) at region(s) where the n metal layer(s) overlap(s),
the oxide semiconductor layer has (n+1) channel regions between the source electrode and the drain electrode in a plan view, and
an oxygen concentration of the low resistance region is lower than an oxygen concentration of the channel region.
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