US 12,154,941 B1
Power MOSFET with gate-source ESD diode structure
Wan-Yu Kai, New Taipei (TW); Chia-Wei Hu, New Taipei (TW); and Ta-Chuan Kuo, New Taipei (TW)
Assigned to Diodes Incorporated, Plano, TX (US)
Filed by Diodes Incorporated, Plano, TX (US)
Filed on Jan. 18, 2024, as Appl. No. 18/416,776.
Int. Cl. H01L 29/861 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/063 (2013.01) [H01L 27/0255 (2013.01); H01L 29/4236 (2013.01); H01L 29/7813 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method comprising:
growing an epitaxial layer over a substrate;
forming a plurality of gates in the epitaxial layer;
forming a body region and a breakdown voltage enhancement and leakage prevention structure in the epitaxial layer, wherein the breakdown voltage enhancement and leakage prevention structure comprises a plurality of n-type wells and a plurality of p-type wells arranged in an alternating manner;
forming a source in the epitaxial layer and a gate-source electrostatic discharge (ESD) diode structure over the epitaxial layer; and
forming a source contact connected to the source and a first terminal of the gate-source ESD diode structure, and a gate contact connected to the plurality of gates and a second terminal of the gate-source ESD diode structure.