US 12,154,921 B2
Image sensor and device for an image sensor
Ines Uhlig, Dresden (DE); Kerstin Kaemmer, Radebeul (DE); Dirk Offenberg, Dresden (DE); and Norbert Thyssen, Dresden (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 10, 2021, as Appl. No. 17/398,147.
Claims priority of application No. 20190506 (EP), filed on Aug. 11, 2020.
Prior Publication US 2022/0052091 A1, Feb. 17, 2022
Int. Cl. H01L 27/146 (2006.01); G02B 5/04 (2006.01); G03B 30/00 (2021.01)
CPC H01L 27/14621 (2013.01) [G02B 5/04 (2013.01); G03B 30/00 (2021.01); H01L 27/14625 (2013.01); H01L 27/14636 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A device for an image sensor, comprising:
a semiconductor device comprising a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region, wherein the photo-sensitive region is configured to generate an electric signal based on incident light; and
an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region, wherein the optical stack comprises a plurality of regions stacked on top of each other, wherein the plurality of regions comprises a filter region configured to selectively transmit the incident light only in a target wavelength range,
wherein the filter region comprises a plurality of stacked layers with varying refractive indexes,
wherein the surface of the semiconductor device is a surface of a recess formed in the metallization stack such that the optical stack is embedded in the metallization stack.