US 12,154,902 B2
Semiconductor device and manufacturing method thereof
Wei-Yuan Lu, Hsinchu (TW); and Sai-Hooi Yeong, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 19, 2023, as Appl. No. 18/224,000.
Application 17/099,636 is a division of application No. 16/200,702, filed on Nov. 27, 2018, granted, now 10,840,243, issued on Nov. 17, 2020.
Application 16/200,702 is a division of application No. 15/696,573, filed on Sep. 6, 2017, granted, now 10,325,911, issued on Jun. 18, 2019.
Application 18/224,000 is a continuation of application No. 17/099,636, filed on Nov. 16, 2020, granted, now 11,798,941.
Claims priority of provisional application 62/440,778, filed on Dec. 30, 2016.
Prior Publication US 2023/0361116 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/08 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/28525 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 21/28518 (2013.01); H01L 21/76831 (2013.01); H01L 21/823425 (2013.01); H01L 29/495 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/4975 (2013.01); H01L 29/665 (2013.01); H01L 29/7853 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an etch-stop layer covering part of a first source/drain epitaxial layer of a first fin structure and a second source/drain epitaxial layer of a second fin structure, and disposed between the first and the source/drain epitaxial layers; and
a third source/drain epitaxial layer disposed on the first and the second epitaxial layers and in direct contact with an upper portion of the etch-stop layer.