US 12,154,865 B2
Power semiconductor device including a semiconductor chip
Fumiyoshi Kawashiro, Tokyo (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Feb. 16, 2022, as Appl. No. 17/673,007.
Claims priority of application No. 2021-148893 (JP), filed on Sep. 13, 2021.
Prior Publication US 2023/0081341 A1, Mar. 16, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 23/3114 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 23/49582 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor chip comprising a first face and a second face on an opposite side to the first face, and comprising a first electrode in the first face;
a first metallic member comprising a first opposed face facing the first electrode and being larger in a profile than the first electrode, the first metallic member comprising a first protruded portion protruded from the first opposed face toward the first electrode and electrically connected to the first electrode; and
an insulating member coating the semiconductor chip and the first metallic member; and
a first conductive member provided between the metallic member and the semiconductor chip, wherein
the first conductive member includes a first surface and a second protruded portion, the first surface opposing to the first protruded portion and directly connecting to the first protruded portion, the second protruded portion being protruded from the first surface, and
a side surface of the second protruded portion directly connecting to a side surface of the first protruded portion.