US 12,154,853 B2
Apparatuses including device structures including pillar structures
Naveen Kaushik, Boise, ID (US); Sidhartha Gupta, Boise, ID (US); Pankaj Sharma, Boise, ID (US); and Haitao Liu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 6, 2023, as Appl. No. 18/164,903.
Application 18/164,903 is a continuation of application No. 17/161,313, filed on Jan. 28, 2021, granted, now 11,605,589.
Prior Publication US 2023/0187346 A1, Jun. 15, 2023
Int. Cl. H01L 23/522 (2006.01); G11C 5/06 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 23/5226 (2013.01) [G11C 5/06 (2013.01); H01L 21/486 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 17 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a stack structure overlying a source tier, the stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers;
pillar structures comprising a channel material vertically extending through the stack structure;
conductive plug structures laterally adjacent to and substantially laterally surrounded by the channel material, upper surfaces of the conductive plug structures and the channel material substantially coplanar with one another; and
low-K dielectric material laterally separating the pillar structures at an elevational level of the conductive plug structures, the low-K dielectric material substantially laterally surrounding the channel material.