| CPC H01L 21/76837 (2013.01) [H01J 37/3244 (2013.01); H01L 21/76826 (2013.01); H01L 21/76834 (2013.01)] | 22 Claims |
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1. A substrate processing method comprising:
providing a substrate comprising a structure comprising a gap;
forming a first thin film on the structure by performing a first cycle a plurality of times, wherein the first cycle comprises:
supplying a first reaction gas onto the structure,
supplying a second reaction gas, wherein the second reaction gas has no chemical reactivity with the first reaction gas,
stopping supplying the first reaction gas,
after stopping the first reaction gas, applying a plasma, wherein the plasma is formed from a gas consisting essentially of the second reaction gas, and
purging a residue, wherein the first thin film comprises carbon;
after performing the first cycle a plurality of times, performing a second cycle a plurality of times to form a second thin film by changing a chemical composition of the first thin film, wherein the second cycle consists essentially of a step of supplying a third reaction gas onto the substrate and a step of purging, wherein the third reaction gas consists essentially of at least one of O2, O3, CO2, H2O, NO2, N2O, or a mixture thereof; and
after performing the second cycle a plurality of times, performing a fourth cycle a plurality of times to form a third thin film having a same component as that of the second thin film on the second thin film while filling the gap.
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