US 12,154,794 B2
Method of etching an indium gallium zinc oxide (IGZO) structure
Shreya Kundu, Herent (BE); and Frederic Lazzarino, Hamme-Mille (BE)
Assigned to IMEC VZW, Leuven (BE)
Filed by IMEC vzw, Leuven (BE)
Filed on Oct. 19, 2021, as Appl. No. 17/451,454.
Claims priority of application No. 20203548 (EP), filed on Oct. 23, 2020.
Prior Publication US 2022/0130681 A1, Apr. 28, 2022
Int. Cl. H01L 21/465 (2006.01)
CPC H01L 21/465 (2013.01) 19 Claims
OG exemplary drawing
 
1. A method of etching an indium gallium zinc oxide (IGZO) structure, the method comprising:
exposing the IGZO structure to a reactant flow comprising a hydrocarbon-based reactant, wherein a non-halogen based reactant monolayer is formed on the IGZO structure; and
exposing the reactant monolayer formed on the IGZO structure to an argon flow, wherein one or more reactant molecules are removed from the reactant monolayer,
wherein the one or more reactant molecules, which are removed from the reactant monolayer formed on the IGZO structure, are removed together with one or more IGZO molecules.