	US 12,154,792 B2
	Plasma etching method
Takayuki Katsunuma, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 30, 2020, as Appl. No. 17/084,938.
Application 17/084,938 is a continuation of application No. 16/176,235, filed on Oct. 31, 2018, granted, now 10,854,470.
Claims priority of application No. 2017-214313 (JP), filed on Nov. 7, 2017.
Prior Publication US 2021/0050222 A1, Feb. 18, 2021
Int. Cl. H01L 21/31 (2006.01); H01J 37/00 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01)

CPC H01L 21/31144 (2013.01) [H01J 37/00 (2013.01); H01J 37/32082 (2013.01); H01J 37/32155 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 21/67069 (2013.01)]

5 Claims

1. A plasma etching apparatus, comprising: a chamber; a gas supply unit configured to supply processing gas to the chamber; a plasma generator configured to generate plasma in the chamber; and a controller configured to cause: providing a substrate having a metal-containing mask provided with a preset opening pattern on an etching target film including silicon oxide film in the chamber; forming a fluoro-carbon protective film on the metal-containing mask provided with the preset opening pattern, using a first processing gas including a first fluoro-carbon gas and oxygen containing gas; and etching the silicon oxide film by plasma using a second processing gas including a second fluoro-carbon gas having a larger F ratio with respect to C than the first fluoro-carbon gas.