US 12,154,787 B2
Methods of performing selective low resistivity Ru atomic layer deposition and interconnect formed using the same
Michael Breeden, La Jolla, CA (US); Victor Wang, La Jolla, CA (US); and Andrew Kummel, San Diego, CA (US)
Assigned to The Regents of the University of California, Oakland, CA (US)
Filed by The Regents of the University of California, Oakland, CA (US)
Filed on Dec. 8, 2021, as Appl. No. 17/544,994.
Claims priority of provisional application 63/123,769, filed on Dec. 10, 2020.
Prior Publication US 2022/0189763 A1, Jun. 16, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/0262 (2013.01) [H01L 21/76879 (2013.01); H01L 23/53242 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for atomic layer deposition (ALD) of Ruthenium (Ru) on a substrate comprising at least one cycle of:
exposing a surface of a substrate to a chemical precursor comprising Ru, the surface comprising an SiO2 portion and an SiCOH portion;
depositing the chemical precursor on the surface of the substrate; and
exposing the chemical precursor on the surface of the substrate to a co-reactant,
to provide an Ru film on the surface of the substrate,
wherein substrate is maintained at a temperature of greater than about 250° C. while performing the at least one cycle, and the Ru film is deposited selectively on the SiO2 portion of the surface but not over the SiCOH portion of the surface;
wherein the chemical precursor comprises Ru(EtCp)2, and the co-reactant comprises O2;
wherein the Ru film has a resistivity less than about 9.5 μΩ·cm, and wherein the Ru film is prepared without a post-deposition annealing process.