| CPC G11C 11/5628 (2013.01) [G11C 11/5671 (2013.01); G11C 16/10 (2013.01)] | 17 Claims |
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1. A memory device comprising:
a first set of memory cells each of which has a gate connected to a word line, and each of which is configured to store data in a non-volatile manner corresponding to a threshold voltage thereof, the first set of memory cells including a second set of memory cells and a third set of memory cells different from the second set of memory cells;
a temperature sensor;
an interface configured to receive write data; and
control circuitry configured to execute a first programming operation and execute a second programming operation after the first programming operation,
the first programming operation including
by applying a programming voltage to the word line,
setting the threshold voltage of each of the second set of memory cells in a second section corresponding to the write data among a plurality of first sections, and
setting the threshold voltage of each of the third set of memory cells in a third section among the plurality of first sections, and
the second programming operation including
by applying a programming voltage to the word line,
setting the threshold voltage of each of the second set of memory cells in a fifth section corresponding to the write data among a plurality of fourth sections, a total voltage range of the plurality of fourth sections being wider in voltage range than a total voltage range of the plurality of first sections, and
setting the threshold voltage of each of the third set of memory cells in a sixth section or a seventh section among the plurality of fourth sections in accordance with first temperature information detected by the temperature sensor, the sixth section including the same voltage range as the third section, the seventh section being higher in voltage range than the third section.
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