US 12,153,346 B2
Photoresist for semiconductor fabrication
Chih-Cheng Liu, Hsinchu (TW); Yi-Chen Kuo, Hsinchu (TW); Yen-Yu Chen, Hsinchu (TW); Jr-Hung Li, Hsinchu County (TW); Chi-Ming Yang, Hsinchu (TW); and Tze-Liang Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 17, 2021, as Appl. No. 17/177,837.
Claims priority of provisional application 63/085,364, filed on Sep. 30, 2020.
Prior Publication US 2022/0100087 A1, Mar. 31, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01); G03F 7/16 (2006.01)
CPC G03F 7/0042 (2013.01) [G03F 7/0048 (2013.01); G03F 7/168 (2013.01)] 20 Claims
 
1. An organometallic precursor comprising a chemical formula of MaXbLc,
wherein M is a metal,
wherein X is a multidentate aromatic ligand that comprises a pyrrole-like nitrogen and a pyridine-like nitrogen,
wherein L is an extreme ultraviolet (EUV) cleavable ligand,
wherein a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1 such that the metal has an non-coordinated site.