US 12,153,341 B2
Cleaning method, method for forming semiconductor structure and system thereof
Wu-Hung Ko, Tainan (TW); Chung-Hung Lin, Tainan (TW); and Chih-Wei Wen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/360,830.
Application 17/826,267 is a division of application No. 16/943,881, filed on Jul. 30, 2020, granted, now 11,347,143, issued on May 31, 2022.
Application 18/360,830 is a continuation of application No. 17/826,267, filed on May 27, 2022, granted, now 11,809,076.
Claims priority of provisional application 62/907,963, filed on Sep. 30, 2019.
Prior Publication US 2023/0367206 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/82 (2012.01); B08B 7/00 (2006.01); G03F 7/00 (2006.01); H01L 21/67 (2006.01)
CPC G03F 1/82 (2013.01) [B08B 7/0035 (2013.01); B08B 7/0071 (2013.01); G03F 7/70033 (2013.01); G03F 7/70733 (2013.01); G03F 7/70925 (2013.01); H01L 21/67028 (2013.01); H01L 21/67225 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for cleaning a photomask, comprising:
placing a photomask in a first chamber; and
performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation comprises:
providing hydrogen radicals to the first chamber; and
removing carbon-containing contaminants and oxygen-based contaminants on the photomask by having the hydrogen radicals reacting with the carbon-containing contaminants and the oxygen-based contaminants.