US 12,153,254 B2
Optical isolator and photonic integrated circuit including the same
Dongjae Shin, Seoul (KR); Hyunil Byun, Seongnam-si (KR); Jinmyoung Kim, Hwaseong-si (KR); Changgyun Shin, Anyang-si (KR); and Changbum Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 27, 2023, as Appl. No. 18/114,772.
Application 18/114,772 is a continuation of application No. 17/357,503, filed on Jun. 24, 2021, granted, now 11,630,262.
Claims priority of application No. 10-2021-0006283 (KR), filed on Jan. 15, 2021.
Prior Publication US 2023/0228938 A1, Jul. 20, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G02B 6/12 (2006.01); G01S 7/481 (2006.01); G01S 17/88 (2006.01)
CPC G02B 6/12016 (2013.01) [G01S 7/4818 (2013.01); G01S 17/88 (2013.01); G02B 2006/12035 (2013.01); G02B 2006/12157 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An optical isolator comprising:
a waveguide layer including an input optical waveguide and an output optical waveguide;
an optical attenuator provided on the waveguide layer, the optical attenuator being connected to the input optical waveguide; and
an optical amplifier provided on the waveguide layer, the optical amplifier being connected to the output optical waveguide,
wherein a gain of the optical amplifier decreases when an intensity of light incident on the optical amplifier increases,
wherein first input light incident on the optical attenuator through the input optical waveguide is output as first output light through the output optical waveguide, and second input light incident on the optical amplifier through the output optical waveguide is output as second output light through the input optical waveguide,
wherein when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light, and
wherein each of the optical attenuator and the optical amplifier comprises:
a first contact layer provided on the waveguide layer;
a gain material layer provided on the first contact layer;
a clad semiconductor layer provided on the gain material layer; and
a second contact layer provided on the clad semiconductor layer.