US 12,153,253 B2
Optical device and method of manufacturing the same
Chewn-Pu Jou, Hsinchu (TW); Huan-Neng Chen, Taichung (TW); Lan-Chou Cho, Hsinchu (TW); and Feng Wei Kuo, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 21, 2023, as Appl. No. 18/356,241.
Application 17/195,268 is a division of application No. 16/238,969, filed on Jan. 3, 2019, granted, now 10,976,489, issued on Apr. 13, 2021.
Application 18/356,241 is a continuation of application No. 17/195,268, filed on Mar. 8, 2021, granted, now 11,803,008.
Claims priority of provisional application 62/698,587, filed on Jul. 16, 2018.
Prior Publication US 2023/0367064 A1, Nov. 16, 2023
Int. Cl. G02B 6/12 (2006.01); G02B 6/122 (2006.01)
CPC G02B 6/12004 (2013.01) [G02B 6/1228 (2013.01); G02B 2006/12061 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing an optical device, comprising:
providing a substrate including an oxide layer, a waveguide on the oxide layer and configured to guide light, and a taper on the oxide layer and optically coupled with the waveguide;
forming an attenuator extending along a side of the taper, wherein the formation of the attenuator includes:
forming a semiconductive member on the oxide layer and along the side of the taper;
forming a plurality of conductive vias over the semiconductive member;
forming a metal layer over the plurality of conductive vias and along the side of the taper; and
forming a dielectric layer to surround the waveguide, the taper and the attenuator,
wherein each of the plurality of conductive vias is disposed between and in contact with the metal layer and the semiconductive member.