US 12,152,946 B2
Temperature detection circuit
Nobukazu Suzuki, Kyoto (JP); Hideyo Yamashiro, Kyoto (JP); Yasutaka Sugimoto, Kyoto (JP); and Takayuki Kawano, Kyoto (JP)
Assigned to MURATA MANUFACTURING CO., LTD., Kyoto (JP)
Filed by Murata Manufacturing Co., Ltd., Kyoto (JP)
Filed on Jun. 17, 2021, as Appl. No. 17/350,052.
Application 17/350,052 is a continuation of application No. PCT/JP2019/049131, filed on Dec. 16, 2019.
Claims priority of application No. 2018-236125 (JP), filed on Dec. 18, 2018.
Prior Publication US 2021/0310878 A1, Oct. 7, 2021
Int. Cl. G01K 7/20 (2006.01); G01K 7/16 (2006.01); G01K 7/42 (2006.01)
CPC G01K 7/20 (2013.01) [G01K 7/42 (2013.01); G01K 2007/163 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A temperature detection circuit for detecting a temperature of an amplifier circuit, the temperature detection circuit comprising:
a first transistor of a bipolar type; and
a second transistor of the bipolar type, wherein
the first transistor and the second transistor form a current mirror circuit, and
the temperature of the amplifier circuit is detected based on a temperature change of the first transistor and the second transistor,
a detector circuit connected to a collector terminal of the second transistor, wherein
the current mirror circuit converts a temperature change of the first transistor and the second transistor into a current, and
the detector circuit converts the current into a voltage,
wherein the detector circuit includes:
a third transistor of the bipolar type, wherein a base terminal of the third transistor is connected to the collector terminal of the second transistor;
a fourth transistor of the bipolar type, wherein a base terminal of the fourth transistor is connected to a collector terminal of the third transistor; and
a fifth transistor of the bipolar type, wherein a base terminal of the fifth transistor is connected to a collector terminal of the fourth transistor, and
the detector circuit converts the current inputted to the base terminal of the third transistor into a voltage at an emitter terminal of the fifth transistor.