| CPC C23C 16/56 (2013.01) [C23C 16/401 (2013.01); C23C 16/408 (2013.01); H01L 21/02244 (2013.01)] | 7 Claims |
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1. A film forming method for forming an object film on a substrate, the method comprising:
providing the substrate including an insulating layer and an oxide layer formed on a surface of a metal layer;
reducing the oxide layer by supplying hydrogen and argon;
forming a metal oxide layer which is uniform in a surface state, film thickness, and film quality by selectively oxidizing the surface of the metal layer under an oxygen atmosphere consisting of oxygen and argon after the reducing the oxide layer; and
forming a self-assembled monolayer on the surface of the metal layer through a reaction in which a raw material of the self-assembled monolayer is uniformly adsorbed on the metal oxide layer and the metal oxide layer is uniformly reduced, by supplying a raw material gas of the self-assembled monolayer, after the forming the metal oxide layer,
wherein the reducing the oxide layer is performed under a hydrogen atmosphere in which the hydrogen is less than 0.5% of an atmospheric gas within a process container, and
wherein the reducing the oxide layer and the forming the metal oxide layer are performed in the same process container.
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