US 12,151,947 B2
Semiconductor nanoparticles and method for producing same
Tsukasa Torimoto, Nagoya (JP); Tatsuya Kameyama, Nagoya (JP); Susumu Kuwabata, Ibaraki (JP); Taro Uematsu, Suita (JP); and Daisuke Oyamatsu, Tokushima (JP)
Assigned to National University Corporation Tokai National Higher Education and Research System, Nagoya (JP); OSAKA UNIVERSITY, Suita (JP); and NICHIA CORPORATION, Anan (JP)
Appl. No. 17/310,482
Filed by National University Corporation Tokai National Higher Education and Research System, Nagoya (JP); OSAKA UNIVERSITY, Suita (JP); and NICHIA CORPORATION, Anan (JP)
PCT Filed Feb. 7, 2020, PCT No. PCT/JP2020/004950
§ 371(c)(1), (2) Date Aug. 5, 2021,
PCT Pub. No. WO2020/162622, PCT Pub. Date Aug. 31, 2020.
Claims priority of application No. 2019-021769 (JP), filed on Feb. 8, 2019; and application No. 2019-153620 (JP), filed on Aug. 26, 2019.
Prior Publication US 2022/0089452 A1, Mar. 24, 2022
Int. Cl. C01G 15/00 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); C09K 11/58 (2006.01); C09K 11/62 (2006.01); H01L 33/50 (2010.01)
CPC C01G 15/006 (2013.01) [C09K 11/582 (2013.01); C09K 11/621 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/30 (2013.01); C01P 2004/64 (2013.01); C01P 2006/60 (2013.01); H01L 33/502 (2013.01)] 21 Claims
 
1. A method for producing a semiconductor nanoparticle, the method comprising:
preparing a mixture containing an Ag salt, a salt containing at least one of In and Ga, and an organic solvent;
raising a temperature of the mixture to a raised temperature in a range of from 120° C. to 300° C.; and
adding a supply source of S to the mixture at the raised temperature in such a manner that a rate of increase in a ratio of a number of S atoms to a number of Ag atoms in the mixture is not more than 10/min.