US 12,484,446 B2
FIR infrared (FIR) sensor with two absorption layers
Ming-Han Tsai, Hsin-Chu County (TW); and Chih-Fan Hu, Hsin-Chu County (TW)
Assigned to PIXART IMAGING INC., Hsin-Chu County (TW)
Filed by PIXART IMAGING INC., Hsin-Chu County (TW)
Filed on May 9, 2022, as Appl. No. 17/739,780.
Claims priority of application No. 110127581 (TW), filed on Jul. 27, 2021.
Prior Publication US 2023/0031112 A1, Feb. 2, 2023
Int. Cl. H10N 19/00 (2023.01); G01J 5/12 (2006.01); G01J 5/14 (2006.01); H10N 10/01 (2023.01); H10N 10/13 (2023.01); H10N 10/851 (2023.01)
CPC H10N 19/00 (2023.02) [G01J 5/14 (2013.01); H10N 10/01 (2023.02); H10N 10/13 (2023.02); G01J 2005/123 (2013.01); H10N 10/851 (2023.02); H10N 19/101 (2023.02)] 11 Claims
OG exemplary drawing
 
11. A far infrared (FIR) sensor, comprising:
a substrate;
a thermopile structure, arranged on the substrate;
a heat absorption layer, covering upon the thermopile structure, and comprising a first heat absorption layer stacking on a second heat absorption layer, wherein the first heat absorption layer and the second heat absorption layer are connected by a connection layer, and a cross section of the connection layer is smaller than cross sections of the first heat absorption layer and the second heat absorption layer; and
a peripheral circuit arranged on the substrate and the peripheral circuit comprising multiple metal layers, wherein the connection layer is not aligned with any one of the multiple metal layers in a transverse direction.