| CPC H10K 85/623 (2023.02) [H10K 85/342 (2023.02); H10K 85/346 (2023.02); H10K 85/371 (2023.02); H10K 50/11 (2023.02); H10K 50/121 (2023.02); H10K 2101/10 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02)] | 21 Claims |

|
1. A fluorescent electronic device comprising at least one layer, a sensitizer and a fluorescent emitter, wherein both the sensitizer and the fluorescent emitter are deposited by co-evaporation in the same one of at least one layer as a mixture, and wherein the sensitizer is a phosphorescent compound and wherein at least one of the two following conditions (I) or (II) must be satisfied:
S1K(FE)−S1K(S)≥X (I)
S1max(FE)−S1max(S)≤Y (II)
where the parameters used are as follows:
X, Y are each −0.5 eV or are each −0.4 eV,
S1K(FE) is an energy of a first excited singlet state of the fluorescent emitter which is ascertained from an edge of a first maximum on a short-wavelength side of a normalized photoluminescence spectrum of the fluorescent emitter;
S1K(S) is an energy of a first excited state of the sensitizer which is ascertained from an edge of a first maximum on a short-wavelength side of a normalized photoluminescence spectrum of the sensitizer;
S1max(FE) is the energy of the first excited singlet state of the fluorescent emitter which is ascertained from a location of the first maximum at short wavelengths of a photoluminescence spectrum of the fluorescent emitter;
S1max(S) is the energy of the first excited state of the sensitizer which is ascertained from a location of the first maximum at short wavelengths of a photoluminescence spectrum of the sensitizer;
wherein the photoluminescence spectra of the sensitizer and of the fluorescent emitter are determined from solution at a concentration of 1 mg in 100 ml of toluene at room temperature,
wherein the fluorescent emitter is a sterically shielded compound having a shielding factor (SF) of not less than 0.5;
wherein the photoluminescence emission spectrum of the sensitizer overlaps with an absorption spectrum of the fluorescent emitter; and
wherein the Forster radius is not more than 3 nm.
|