US 12,484,431 B2
Method for preparing an organic semiconducting layer, a composition for use therein and an organic electronic device
Volodymyr Senkovskyy, Dresden (DE); Pierre Seidenglanz, Dresden (DE); Peter Robaschik, Dresden (DE); Ulrich Denker, Dresden (DE); Stefan Zott, Dresden (DE); Anne Fadhel, Dresden (DE); Martin Ammann, Dresden (DE); and Regina Luschtinetz, Dresden (DE)
Assigned to Novaled GmbH, Dresden (DE)
Appl. No. 17/428,793
Filed by Novaled GmbH, Dresden (DE)
PCT Filed Feb. 5, 2020, PCT No. PCT/EP2020/052850
§ 371(c)(1), (2) Date Aug. 5, 2021,
PCT Pub. No. WO2020/161180, PCT Pub. Date Aug. 13, 2020.
Claims priority of application No. 19155731 (EP), filed on Feb. 6, 2019.
Prior Publication US 2022/0131115 A1, Apr. 28, 2022
Int. Cl. H10K 71/16 (2023.01); C07C 13/66 (2006.01); C07C 15/28 (2006.01); C07D 221/18 (2006.01); C07D 251/24 (2006.01); C07D 307/91 (2006.01); C07D 405/04 (2006.01); C07D 405/10 (2006.01); C07D 409/04 (2006.01); C09K 11/06 (2006.01); H10K 85/30 (2023.01); H10K 85/60 (2023.01)
CPC H10K 71/164 (2023.02) [C07C 13/66 (2013.01); C07C 15/28 (2013.01); C07D 221/18 (2013.01); C07D 251/24 (2013.01); C07D 307/91 (2013.01); C07D 405/04 (2013.01); C07D 405/10 (2013.01); C07D 409/04 (2013.01); C09K 11/06 (2013.01); H10K 85/615 (2023.02); H10K 85/623 (2023.02); H10K 85/626 (2023.02); H10K 85/654 (2023.02); H10K 85/6572 (2023.02); H10K 85/6574 (2023.02); H10K 85/6576 (2023.02); C07C 2603/24 (2017.05); C07C 2603/40 (2017.05); C09K 2211/1007 (2013.01); C09K 2211/1011 (2013.01); C09K 2211/1018 (2013.01); H10K 85/322 (2023.02)] 20 Claims
OG exemplary drawing
 
11. Organic electronic device comprising an anode, a cathode and an organic semiconducting layer obtainable by a method for preparing the organic semiconducting layer comprising the steps:
a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising
aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C10 to C30 condensed aryl group and/or at least one unsubstituted or substituted C3 to C30 heteroaryl group, wherein the one or more substituent(s) if present, are independently selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a C1 to C22 silyl group, (iv) a C1 to C30 alkyl group, (v) a C1 to C10 alkylsilyl group, (vi) a C6 to C22 arylsilyl group, (vii) a C3 to C30 cycloalkyl group, (viii) a C2 to C30 heterocycloalkyl group, (ix) a C0 to C30 aryl group, (x) a C2 to C30 heteroaryl group, (xi) a C1 to C30 perfluoro-hydrocarbyl group, and (xii) a C1 to C10 trifluoroalkyl group,
wherein the first organic compound has
i) a dipole moment in the range of >0 and <2 Debye; and
ii) a molecular weight of the chemical formula (in g/mol) in the range of >400 and <1,800; and
bb) a metal borate compound;
b) transferring the first composition from the solid phase into the gas phase in a vacuum chamber; and
c) depositing the first composition to form the organic semiconducting layer.