US 12,484,352 B2
Light emitting device, pixel comprising several such devices, matrix of pixels and associated manufacturing methods
Badhise Ben Bakir, Grenoble (FR); Adrien Gasse, Grenoble (FR); Gilles Le Blevennec, Grenoble (FR); and Nicolas Olivier, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Jun. 8, 2021, as Appl. No. 17/342,105.
Claims priority of application No. 2006161 (FR), filed on Jun. 12, 2020.
Prior Publication US 2021/0391497 A1, Dec. 16, 2021
Int. Cl. H10H 20/856 (2025.01); H01L 25/16 (2023.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/814 (2025.01); H10H 29/14 (2025.01)
CPC H10H 20/856 (2025.01) [H01L 25/167 (2013.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/814 (2025.01); H10H 29/142 (2025.01); H10H 20/0362 (2025.01); H10H 20/0363 (2025.01)] 17 Claims
OG exemplary drawing
 
1. An optoelectronic light emitting device comprising:
a light emitting diode configured to emit a first radiation, and
a conversion layer which extends above the light emitting diode and which is configured to convert a part at least of the first radiation into a second radiation, by photoluminescence, the conversion layer being delimited laterally by a lateral surface, the conversion layer comprising at least one planar quantum well configured to emit the second radiation,
a diffraction grating, configured to extract a part at least of the second radiation from the conversion layer, the diffraction grating being etched on an upper face of the conversion layer, and
a lateral reflector having a reflective surface which extends transversally with respect to the conversion layer, facing a part at least of the lateral surface of the conversion layer, the reflective surface of the reflector and the lateral surface of the conversion layer being separated from each other by a material having an optical index n2, and wherein a distance separating the reflective surface of the reflector from the lateral surface of the conversion layer is comprised between λ/(n2×40) and λ/(n2×2) where λ is the average wavelength of the second radiation.