| CPC H10H 20/855 (2025.01) [H10D 62/80 (2025.01); H10D 86/423 (2025.01); H10D 86/431 (2025.01); H10D 86/60 (2025.01); H10H 20/832 (2025.01)] | 16 Claims |
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1. A display device, comprising:
a substrate;
a second semiconductor layer disposed on the substrate, the second semiconductor layer including Si;
a second gate lower electrode overlaps a channel region of the second semiconductor layer;
a second gate insulating layer disposed on the second gate lower electrode;
a second gate upper electrode and an electrode disposed on the second gate insulating layer;
a first auxiliary layer disposed on the second gate upper electrode and the electrode;
a first semiconductor layer overlaps the electrode, the first semiconductor layer includes an oxide semiconductor; and
a first gate electrode overlaps a channel region of the first semiconductor layer,
wherein the first auxiliary layer includes SiNx:F, and
the second gate upper electrode and the electrode are disposed on the same layer.
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