US 12,484,348 B2
Substrate, method for forming the same, display device and for forming the same
Meili Wang, Beijing (CN); and Qi Qi, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN)
Appl. No. 17/784,437
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Jul. 6, 2021, PCT No. PCT/CN2021/104720
§ 371(c)(1), (2) Date Jun. 10, 2022,
PCT Pub. No. WO2022/042051, PCT Pub. Date Mar. 3, 2022.
Claims priority of application No. 202010883934.X (CN), filed on Aug. 28, 2020.
Prior Publication US 2023/0006107 A1, Jan. 5, 2023
Int. Cl. H10H 20/85 (2025.01); H10H 20/01 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/8506 (2025.01) [H10H 20/01 (2025.01); H10H 20/857 (2025.01); H10H 20/0364 (2025.01)] 12 Claims
OG exemplary drawing
 
1. A method for forming a substrate, wherein the substrate comprises a base substrate,
wherein at least two bonding pads are arranged on the base substrate, the base substrate and an electronic element are bonded to each other through the at least two bonding pads, at least two pins are arranged on the electronic element, a protective layer is arranged at a side of the bonding pads away from the base substrate, and an opening region is arranged in the protective layer at each bonding pad, to expose partial surface of the bonding pad; a bonding combination layer made of a low-melting-point alloy material is arranged in the opening region, and the low-melting-point alloy material is capable of being melted at a first predetermined temperature, to enable the bonding pads and the pins to be bonded to each other; and
wherein the method comprises
providing the base substrate;
forming the at least two bonding pads on the base substrate;
forming the protective layer at the side of the bonding pads away from the base substrate;
patterning the protective layer to form the opening region at each bonding pad;
directly forming a low-melting-point alloy layer made of the low-melting-point alloy material at a side of the protective layer away from the base substrate, wherein at least a portion of the low-melting-point alloy layer is located in the opening region and at least another portion covers the protective layer; and
patterning the low-melting-point alloy layer to form the bonding combination layer in the opening region.