US 12,484,343 B2
Single chip multi band light emitting diode, light emitting device and light emitting module having the same
Chung Hoon Lee, Gyeonggi-do (KR); Yong Hyun Baek, Gyeonggi-do (KR); Ji Hun Kang, Gyeonggi-do (KR); Dae Hong Min, Gyeonggi-do (KR); Dae Sung Cho, Gyeonggi-do (KR); and So Ra Lee, Gyeonggi-do (KR)
Assigned to Seoul Viosys Co., Ltd., Gyeonggi-do (KR)
Filed by SEOUL VIOSYS CO., LTD., Gyeonggi-do (KR)
Filed on Feb. 16, 2022, as Appl. No. 17/673,068.
Claims priority of provisional application 63/153,703, filed on Feb. 25, 2021.
Claims priority of provisional application 63/150,280, filed on Feb. 17, 2021.
Prior Publication US 2022/0262983 A1, Aug. 18, 2022
Int. Cl. H10H 20/821 (2025.01); H01L 25/075 (2006.01); H10H 20/812 (2025.01); H10H 20/813 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/821 (2025.01) [H10H 20/813 (2025.01); H10H 20/8252 (2025.01); H01L 25/0753 (2013.01); H10H 20/812 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A light emitting module, comprising:
a circuit board;
a light emitting device arranged on the circuit board; the light emitting device, comprising:
a light emitting diode, comprising:
a first type nitride semiconductor layer;
a second type nitride semiconductor layer;
a V-pit generation layer disposed between the first type nitride semiconductor layer and the second type nitride semiconductor layer and having V-pits;
an active layer disposed between the V-pit generation layer and the second type nitride semiconductor layer, and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer;
a sub-emission layer disposed between the V-pit generation layer and the second type nitride semiconductor layer; and
a light transmitting layer covering the first type nitride semiconductor layer or the second type nitride semiconductor layer and including a light emission surface,
wherein the sub-emission layer emits light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light transmitting layer is within a range of 0.205≤X≤0.495 in CIE color coordinates (X, Y), and
wherein the light emission surface of the light transmitting layer is closer to the sub-emission layer than the active layer.