| CPC H10H 20/8162 (2025.01) [H10H 20/0137 (2025.01); H10H 20/825 (2025.01)] | 15 Claims |
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1. An epitaxial layer, comprising:
an N-type semiconductor layer;
an active layer;
a P-type semiconductor layer; and
an electron-blocking layer, wherein
the electron-blocking layer is disposed between the active layer and the P-type semiconductor layer, and the N-type semiconductor layer is disposed on one side of the active layer away from the electron-blocking layer; the electron-blocking layer comprising:
a proximal aluminum barrier layer close to the active layer;
a distal aluminum barrier layer close to the P-type semiconductor layer, a content of aluminum component in the distal aluminum barrier layer being lower than a content of aluminum component in the proximal aluminum barrier layer; and
an indium well layer disposed between the proximal aluminum barrier layer and the distal aluminum barrier layer;
at least one of the content of the aluminum component in the proximal aluminum barrier layer, the content of the aluminum component in the distal aluminum barrier layer, or a content of indium component in the indium well layer varies in a gradient manner,
the proximal aluminum barrier layer comprises a first sub-layer, a second sub-layer, and a third sub-layer in sequence, and the first sub-layer is closest to the active layer, and
from one side of the proximal aluminum barrier layer close to the active layer to one side of the proximal aluminum barrier layer away from the active layer, a content of the aluminum component in the first sub-layer gradually increases, a content of the aluminum component in the second sub-layer maintains unchanged, a content of the aluminum component in the third sub-layer gradually decreases, and peak values of the content of the aluminum component in the first sub-layer, the content of the aluminum component in the second sub-layer, and the content of the aluminum component in the third sub-layer are the same.
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