| CPC H10F 71/103 (2025.01) [H10F 71/1221 (2025.01); H10F 71/128 (2025.01)] | 8 Claims |
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1. A method for preparing a solar cell, comprising following steps:
forming a tunneling oxide layer on a first side of a silicon substrate;
forming an emitter region on a second side of the silicon substrate, wherein the second side of the silicon substrate is disposed opposite to the first side of the silicon substrate;
forming an amorphous silicon layer on the tunneling oxide layer;
performing a diffusion doping treatment on the amorphous silicon layer, wherein the diffusion doping treatment comprises: a first process of introducing a doping source and an oxygen source into a diffusion chamber, and heating the amorphous silicon layer, so that a doped polycrystalline silicon layer is formed on the amorphous silicon layer and a doped oxide layer is formed on the doped polycrystalline silicon layer; and a second process of stopping introducing the doping source and maintaining an introduction of the oxygen source to increase a thickness of the doped oxide layer; and
forming a heavily doped region in the doped polycrystalline layer by a laser doping process.
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