| CPC H10F 39/807 (2025.01) [H10F 39/024 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01)] | 20 Claims |
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1. A method of fabricating an image sensor, comprising:
forming a semiconductor substrate of a first conductivity type;
forming an isolation trench defining pixel regions in the semiconductor substrate;
forming a liner insulating layer in the isolation trench;
doping the liner insulating layer with dopants of the first conductivity type;
forming a semiconductor layer on the liner insulating layer to fill the isolation trench, after the doping of the dopants in the liner insulating layer; and
performing a thermal treatment process on the semiconductor substrate, after forming the semiconductor layer on the liner insulating layer,
wherein, after the thermal treatment process, the semiconductor layer is doped with the same dopants as the dopants doped in the liner insulating layer.
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