US 12,484,322 B2
Solid-state imaging device and electronic apparatus
Tomoki Hiramatsu, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 18/021,312
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Sep. 16, 2021, PCT No. PCT/JP2021/034067
§ 371(c)(1), (2) Date Feb. 14, 2023,
PCT Pub. No. WO2022/065186, PCT Pub. Date Mar. 31, 2022.
Claims priority of application No. 2020-161365 (JP), filed on Sep. 25, 2020.
Prior Publication US 2023/0230999 A1, Jul. 20, 2023
Int. Cl. H10F 39/18 (2025.01); H04N 25/63 (2023.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01); H10F 39/00 (2025.01)
CPC H10F 39/1843 (2025.01) [H04N 25/63 (2023.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01); H10F 39/182 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/807 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A solid-state imaging device including:
a plurality of pixels arranged in a matrix, wherein
each of the pixels includes
a first semiconductor layer,
a photoelectric conversion section disposed on the first semiconductor layer on a side of a first surface,
an accumulation electrode disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface,
a wiring extending from the second surface of the first semiconductor layer,
a floating diffusion region connected to the first semiconductor layer via the wiring,
a first gate that forms a potential barrier in a charge flow path from the first semiconductor layer to the floating diffusion region via the wiring, where the first gate is a fixed charge film having a same polarity as a polarity of a charge generated by photoelectric conversion by the photoelectric conversion section.