US 12,484,320 B2
Solid-state image capturing element, solid-state image capturing device, and solid-state image capturing element reading method
Kenichi Murata, Kanagawa (JP); Masahiro Joei, Kanagawa (JP); Fumihiko Koga, Kanagawa (JP); Iwao Yagi, Kanagawa (JP); Shintarou Hirata, Tokyo (JP); Hideaki Togashi, Kanagawa (JP); Yosuke Saito, Tokyo (JP); and Shingo Takahashi, Kanagawa (JP)
Assigned to Sony Group Corporation, Tokyo (JP); and Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Dec. 19, 2023, as Appl. No. 18/545,270.
Application 18/545,270 is a continuation of application No. 17/261,221, granted, now 11,888,012, previously published as PCT/JP2019/029324, filed on Jul. 25, 2019.
Claims priority of application No. 2018-140152 (JP), filed on Jul. 26, 2018.
Prior Publication US 2024/0145517 A1, May 2, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 39/18 (2025.01); H04N 25/76 (2023.01); H10F 39/00 (2025.01)
CPC H10F 39/18 (2025.01) [H04N 25/76 (2023.01); H10F 39/8057 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An element, comprising:
a semiconductor substrate;
a first photoelectric conversion part disposed above the semiconductor substrate and configured to convert light into electric charge; and
a second photoelectric conversion part disposed above the first photoelectric conversion part and configured to convert light into electric charge, wherein
at least one of the first photoelectric conversion part or the second photoelectric conversion part have a structure including:
a common electrode,
a reading electrode, and
a photoelectric conversion region between the common electrode and the reading electrode,
wherein at least one of the reading electrode of the first photoelectric conversion part or the reading electrode of the second photoelectric conversion part is electrically connected to an electric charge accumulation part in the semiconductor substrate through a common penetration electrode penetrating through the semiconductor substrate,
wherein the reading electrode of the second photoelectric conversion part is electrically connected to the reading electrode of the first photoelectric conversion part through a first penetration electrode, and
wherein, when the element is viewed from above, the first penetration electrode is disposed so as to be overlapped with the common penetration electrode.