US 12,484,316 B2
CVD boron uniformity overcoming loading effects
Jehn-Huar Howard Chern, Morgan Hill, CA (US); Marcel Trimpl, San Jose, CA (US); and David L. Brown, Los Gatos, CA (US)
Assigned to KLA Corporation, Milpitas, CA (US)
Filed by KLA Corporation, Milpitas, CA (US)
Filed on Dec. 4, 2024, as Appl. No. 18/968,641.
Claims priority of provisional application 63/559,866, filed on Feb. 29, 2024.
Prior Publication US 2025/0280611 A1, Sep. 4, 2025
Int. Cl. H10F 30/295 (2025.01)
CPC H10F 30/295 (2025.01) 29 Claims
OG exemplary drawing
 
1. A detector comprising:
a silicon layer, wherein the silicon layer is monocrystalline silicon and an n-type semiconductor;
an epitaxial layer, wherein the epitaxial layer is deposited on the silicon layer;
a dielectric layer, wherein the dielectric layer is deposited on the epitaxial layer;
an adhesion layer, wherein the adhesion layer is deposited on the dielectric layer, wherein the dielectric layer and the adhesion layer define a window to the epitaxial layer; and
boron layers including an upper boron layer and a lower boron layer, wherein the upper boron layer is deposited on the adhesion layer, wherein the lower boron layer is deposited on the epitaxial layer within the window, wherein the boron layers are p-type semiconductors, wherein the upper boron layer is separated from the lower boron layer by the dielectric layer, wherein the lower boron layer includes a boron concentration of at least 80 percent, wherein the lower boron layer is a pinhole-free film, wherein at least one of an electron or a photon is configured to penetrate the lower boron layer, wherein the lower boron layer, the epitaxial layer, and the silicon layer form a p-n diode by which the detector is configured to detect at least one of the electron or the photon.