US 12,484,288 B2
Semiconductor device with first and second source/drain epitaxial layers
Te-An Chen, Beitun District (TW); and Meng-Han Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 15, 2024, as Appl. No. 18/443,106.
Application 17/855,297 is a division of application No. 16/938,875, filed on Jul. 24, 2020, granted, now 11,515,212, issued on Nov. 29, 2022.
Application 18/443,106 is a continuation of application No. 17/855,297, filed on Jun. 30, 2022, granted, now 11,935,791.
Claims priority of provisional application 62/928,055, filed on Oct. 30, 2019.
Prior Publication US 2024/0186185 A1, Jun. 6, 2024
Int. Cl. H10D 84/85 (2025.01); B82Y 10/00 (2011.01); H01L 21/28 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 84/013 (2025.01) [H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10D 62/151 (2025.01); H10D 84/0135 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H10D 30/6735 (2025.01); H10D 84/017 (2025.01); H10D 84/85 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an isolation structure formed in a substrate adjacent an active region;
a first gate structure and a second gate structure disposed over the active region;
a dummy structure disposed over the isolation structure,
wherein the first gate structure, second gate structure, and dummy gate structure extend in a first direction and are arranged in a second direction crossing the first direction;
a first source/drain epitaxial layer disposed between the dummy structure and the first gate structure and a second source/drain epitaxial layer disposed between the first gate structure and the second gate structure; and
an etch stop layer disposed over sidewalls of the dummy structure, first gate structure, and second gate structure,
wherein the etch stop layer has a step therein in between the dummy structure and the first gate structure; and
the second source/drain epitaxial layer extends a greater distance into the substrate than the first source/drain epitaxial layer.