US 12,484,287 B2
Ferroelectric material, and electronic device including the same
Dukhyun Choe, Suwon-si (KR); Jinseong Heo, Suwon-si (KR); and Yunseong Lee, Osan-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 15, 2022, as Appl. No. 17/945,528.
Claims priority of application No. 10-2021-0125248 (KR), filed on Sep. 17, 2021.
Prior Publication US 2023/0107911 A1, Apr. 6, 2023
Int. Cl. H10D 64/68 (2025.01); C30B 29/16 (2006.01); H10B 51/30 (2023.01); H10B 53/30 (2023.01); H10D 1/68 (2025.01); H10D 30/00 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01)
CPC H10D 64/689 (2025.01) [C30B 29/16 (2013.01); H10B 51/30 (2023.02); H10B 53/30 (2023.02); H10D 30/0415 (2025.01); H10D 30/501 (2025.01); H10D 30/6211 (2025.01); H10D 30/701 (2025.01); C01P 2002/76 (2013.01); H10D 1/68 (2025.01); H10D 62/121 (2025.01)] 36 Claims
OG exemplary drawing
 
1. A ferroelectric material comprising:
a first domain including a first polarization layer configured to be polarized in a first direction and a first spacer layer adjacent to the first polarization layer;
a second domain including a second polarization layer configured to be polarized in a second direction distinct from the first direction and a second spacer layer adjacent to the second polarization layer; and
a structural layer at a domain wall between the first domain and the second domain, the structural layer having an orthorhombic crystal structure.