US 12,484,280 B2
Silicide-layer-coupled doped portion of active region and method of fabricating same
Chung-Hui Chen, Hsinchu (TW); Tung-Tsun Chen, Hsinchu (TW); and Jui-Cheng Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Mar. 25, 2024, as Appl. No. 18/615,255.
Application 18/155,887 is a division of application No. 17/175,064, filed on Feb. 12, 2021, granted, now 11,563,095, issued on Jan. 24, 2023.
Application 18/615,255 is a continuation of application No. 18/155,887, filed on Jan. 18, 2023, granted, now 11,967,621.
Claims priority of provisional application 63/031,905, filed on May 29, 2020.
Prior Publication US 2024/0234526 A1, Jul. 11, 2024
Int. Cl. H10D 64/23 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H01L 23/34 (2006.01); H10D 30/67 (2025.01); H10D 84/80 (2025.01)
CPC H10D 64/254 (2025.01) [H10D 30/0212 (2025.01); H10D 64/01 (2025.01); H10D 64/251 (2025.01); H10D 64/256 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01); H10D 84/017 (2025.01); H01L 23/345 (2013.01); H10D 30/6713 (2025.01); H10D 84/811 (2025.01)] 20 Claims
OG exemplary drawing
 
11. A semiconductor device comprising:
a first arrangement including first and second silicide layers correspondingly electrically coupled to opposing first and second surfaces of a doped first portion of an active region; and
a second arrangement including a third silicide layer electrically coupled to a first or second surface of a doped second portion of the active region,
a resistance of the doped second portion being sufficiently different than a resistance of the doped first portion such that the doped first portion of the first arrangement is effective as a heater for the doped second portion of the second arrangement.