US 12,484,262 B2
Tunnel field effect transistor devices
Alexander Reznicek, Troy, NY (US); Bahman Hekmatshoartabari, White Plains, NY (US); Ruilong Xie, Niskayuna, NY (US); and ChoongHyun Lee, Chigasaki (JP)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Nov. 17, 2021, as Appl. No. 17/528,279.
Prior Publication US 2023/0155009 A1, May 18, 2023
Int. Cl. H10D 48/00 (2025.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01)
CPC H10D 48/383 (2025.01) [H01L 21/02532 (2013.01); H01L 21/0259 (2013.01); H01L 21/2252 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6741 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor nanosheet tunnel FET (field effect transistor) comprising
a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region;
wherein the first source/drain region comprises a p-type material;
wherein the second source/drain region comprises an n-type material; and
wherein the nanosheet channels adjacent to the n-type material comprise n-type dopants.