US 12,484,253 B2
Metal features of a semiconductor device and methods for forming the same
Kuan-Kan Hu, Hsinchu (TW); Tsung-Kai Chiu, Hsinchu County (TW); Wei-Yen Woon, Taoyuan (TW); Szuya Liao, Zubei Hsinchu (TW); and Ku-Feng Yang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 26, 2023, as Appl. No. 18/160,019.
Claims priority of provisional application 63/384,587, filed on Nov. 21, 2022.
Claims priority of provisional application 63/370,589, filed on Aug. 5, 2022.
Claims priority of provisional application 63/367,684, filed on Jul. 5, 2022.
Prior Publication US 2024/0014282 A1, Jan. 11, 2024
Int. Cl. H01L 29/423 (2006.01); H01L 21/02 (2006.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 30/6735 (2025.01) [H01L 21/02499 (2013.01); H10D 30/6757 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing an opening above a semiconductor substrate;
depositing a catalyst layer along a surface of the opening;
performing a selectivity enhancement process, wherein the selectivity enhancement process alters a deposition rate of a metal component on at least one region of the catalyst layer; and
depositing the metal component on the catalyst layer.