US 12,484,238 B2
Semiconductor apparatus
Yuji Ebiike, Tokyo (JP); and Shigeto Honda, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Dec. 7, 2022, as Appl. No. 18/062,862.
Claims priority of application No. 2022-086257 (JP), filed on May 26, 2022.
Prior Publication US 2023/0387278 A1, Nov. 30, 2023
Int. Cl. H10D 12/00 (2025.01); H10D 1/20 (2025.01); H10D 8/00 (2025.01)
CPC H10D 12/481 (2025.01) [H10D 1/20 (2025.01); H10D 8/00 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor apparatus comprising:
a first gate electrode;
a second gate electrode connected in parallel with the first gate electrode;
a control circuit connected to the first gate electrode and the second gate electrode and configured to control gate voltages; and
a coil connected between the second gate electrode and the control circuit, without any coil positioned in a conductive path between the first gate electrode and the control circuit.