US 12,484,237 B2
Insulated gate bipolar transistor
Hsin-Ming Hou, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jan. 17, 2022, as Appl. No. 17/577,025.
Claims priority of application No. 202111587888.X (CN), filed on Dec. 23, 2021.
Prior Publication US 2023/0207672 A1, Jun. 29, 2023
Int. Cl. H10D 12/00 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01)
CPC H10D 12/461 (2025.01) [H10D 30/475 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 16 Claims
OG exemplary drawing
 
1. An insulated gate bipolar transistor, comprising:
a P-type group III-V nitride compound layer;
an N-type group III-V nitride compound layer contacting a side of the P-type group III-V nitride compound layer;
a high electron mobility transistor (HEMT) disposed on the N-type group III-V nitride compound layer, wherein the HEMT comprises:
a first group III-V nitride compound layer disposed on the N-type group III-V nitride compound layer;
a second group III-V nitride compound layer disposed on the first group III-V nitride compound layer;
a source embedded within the second group III-V nitride compound layer and the first group III-V nitride compound layer, wherein the source comprises an N-type group III-V nitride compound body and a metal contact;
a drain contacting another side of the P-type group III-V nitride compound layer; and
a gate disposed on the second group III-V nitride compound layer.