US 12,484,235 B2
Solid-state switch
Guy M. Cohen, Ossining, NY (US); Takashi Ando, Eastchester, NY (US); and Nanbo Gong, White Plains, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Mar. 12, 2022, as Appl. No. 17/693,340.
Prior Publication US 2023/0320105 A1, Oct. 5, 2023
Int. Cl. H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10B 63/84 (2023.02) [H10N 70/011 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8413 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A solid-state switch structure comprising:
a first solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following a first type programming pulse and a low electrical resistance obtained following a second type programming pulse;
a second solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following said second type programming pulse and a low electrical resistance obtained following said first type programming pulse;
a first contact made to a first end of said first solid-state material;
a second contact made to a first end of said second solid-state material; and
a third contact made to a second end of said first solid-state material and to a second end of said second solid-state material.