US 12,484,232 B2
Ferroelectric memory device and method of fabricating the same
Tzu-Yu Lin, Taoyuan (TW); and Yao-Wen Chang, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/814,698.
Claims priority of provisional application 63/314,015, filed on Feb. 25, 2022.
Prior Publication US 2023/0276633 A1, Aug. 31, 2023
Int. Cl. H01L 23/52 (2006.01); H01L 23/528 (2006.01); H10B 51/30 (2023.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01)
CPC H10B 51/30 (2023.02) [H01L 23/5283 (2013.01); H10D 30/0415 (2025.01); H10D 30/701 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an interconnect structure on a substrate;
a first electrode on the interconnect structure, wherein the first electrode comprises a first portion and a second portion on the first portion, wherein the first portion comprises a first metal nitride conductive material, wherein the second portion comprises a second metal nitride conductive material, and wherein a first nitrogen-to-metal ratio of the first metal nitride conductive material and a second nitrogen-to-metal ratio of the second metal nitride conductive material are different;
a ferroelectric layer on the first electrode, wherein the ferroelectric layer comprises a ferroelectric material having an orthorhombic phase, and
a second electrode on the ferroelectric layer, wherein the second electrode comprises the second metal nitride conductive material.