US 12,484,210 B2
Semiconductor structure and method for forming the same
Xiaopei Fang, Quanzhou (CN); Gang-Yi Lin, Quanzhou (CN); and Congcong Wang, Quanzhou (CN)
Assigned to Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on Apr. 13, 2022, as Appl. No. 17/720,286.
Claims priority of application No. 202210146219.7 (CN), filed on Feb. 17, 2022; and application No. 202220323085.7 (CN), filed on Feb. 17, 2022.
Prior Publication US 2023/0260905 A1, Aug. 17, 2023
Int. Cl. H10B 12/00 (2023.01); H01L 23/528 (2006.01)
CPC H10B 12/02 (2023.02) [H01L 23/5283 (2013.01); H10B 12/30 (2023.02); H10B 12/482 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a first dielectric layer on the substrate;
a second dielectric layer on the first dielectric layer;
an interconnection structure on the second dielectric layer, wherein the interconnection structure comprises:
at least two lateral extending portions on the second dielectric layer; and
a U-shaped portion through the second dielectric layer and a portion of the first dielectric layer and connected between adjacent ends of the two lateral extending portions; and
a third dielectric layer on the second dielectric layer and filling a recess of the U-shaped portion of the interconnection structure.