| CPC H10B 12/01 (2023.02) | 5 Claims |
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1. A method for manufacturing a semiconductor structure, comprising:
providing a substrate, the substrate comprising a first region and a second region; a stacked structure being formed on the substrate, and the stacked structure comprising first semiconductor layers and second semiconductor layers stacked alternately in sequence along a direction perpendicular to a plane where the substrate is located;
etching the stacked structure, such that the first semiconductor layers and the second semiconductor layers located in the second region respectively form at least one first sub-part extending in a first direction and at least one third sub-part extending in the first direction, and the first semiconductor layers and the second semiconductor layers remaining in the first region respectively constitute a second sub-part extending in a second direction and a fourth sub-part extending in the second direction, the first direction being a direction parallel to the plane where the substrate is located, and the second direction being parallel to the plane where the substrate is located and perpendicular to the first direction;
removing the third sub-part; and
forming a first dielectric layer at least filling a gap between two adjacent ones of first sub-part;
wherein before the stacked structure is etched, the method further comprises:
forming a first cap layer covering the stacked structure; and
forming a second cap layer covering the first cap layer;
wherein after the first dielectric layer is formed, the method further comprises:
forming a first mask layer, the first mask layer comprising at least one second opening extending in the second direction, and the second opening being located above the second region;
removing the first cap layer and the first dielectric layer below the second opening by etching to form an accommodation cavity that is non-closed; and
filling a second dielectric layer in the accommodation cavity;
wherein the first region together with a region between the first region and the second dielectric layer are defined as a third region; the second region into which the region between the first region and the second dielectric layer is not counted is defined as a fourth region, the first sub-part located in the fourth region is defined as a first section, and the first sub-part located in the third region is defined as a second section,
wherein after the second dielectric layer is filled in the accommodation cavity, the method further comprises:
forming a second mask layer covering the fourth region and exposing the second cap layer and the first dielectric layer located in the third region; and
removing the first cap layer, the second cap layer, the first dielectric layer and the fourth sub-part located in the third region by taking the second mask layer as a mask, and retaining the second sub-part and the second section of the first sub-part located in the third region,
wherein the first cap layer, the second cap layer, the first dielectric layer, and the second dielectric layer located in the fourth region are defined as a support structure.
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