| CPC H03K 17/6871 (2013.01) | 26 Claims |

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1. A semiconductor switch comprising:
a first main terminal;
a second main terminal;
a control terminal;
a III-nitride high-electron-mobility transistor (HEMT), the III-nitride HEMT comprising a first source terminal, a first drain terminal, and a first gate terminal;
a first interface circuit operatively connected to the control terminal and to the first gate terminal; and
a short-circuit detection circuit operatively connected to the first drain terminal and the first source terminal, the short-circuit detection circuit configured to sense a short-circuit across the first drain terminal and the first source terminal and transmit a short-circuit detection signal to the first interface circuit, the first interface circuit being configured, upon receipt of the short-circuit detection signal, to cause the III-nitride HEMT to turn off, and/or to cause a voltage across the first gate terminal to be reduced, the short-circuit detection circuit comprising:
a voltage detection circuit configured to compare a voltage across the first drain terminal and the first source terminal with a reference voltage, and to output a high voltage detection signal when the voltage across the first drain terminal and the first source terminal is above the reference voltage; and
a blanking time circuit configured to output a blanking time signal after a blanking time period has elapsed,
wherein the short-circuit detection circuit is configured to transmit the short-circuit detection signal based on the high voltage detection signal and the blanking time signal.
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