US 12,483,026 B2
Electrostatic protection circuit
Takayuki Hiraoka, Kawasaki Kanagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Kawasaki (JP); and Toshiba Electronic Devices & Storage Corporation, Kawasaki (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Aug. 23, 2023, as Appl. No. 18/237,319.
Claims priority of application No. 2023-049564 (JP), filed on Mar. 27, 2023.
Prior Publication US 2024/0332957 A1, Oct. 3, 2024
Int. Cl. H02H 9/04 (2006.01)
CPC H02H 9/044 (2013.01) 18 Claims
OG exemplary drawing
 
1. An electrostatic protection circuit comprising:
a first diode coupled to a first wiring;
a second diode coupled between the first diode and a second wiring;
a third diode coupled between the first wiring and a first node at which the first diode and the second diode are coupled to each other;
a first resistance element coupled between the third diode and the first wiring;
a first MOS field-effect transistor coupled between the first node and the first wiring, a gate of the first MOS field-effect transistor being electrically coupled to a second node at which the first resistance element and the third diode are coupled to each other; and
a second MOS field-effect transistor coupled between the first node and the first MOS field-effect transistor, a gate of the second MOS field-effect transistor being electrically coupled to the second node, a first end of the second MOS field-effect transistor being coupled to a second end of the first MOS field-effect transistor, a second end of the second MOS field-effect transistor being electrically coupled to the first node.