US 12,482,796 B2
Optoelectronic device manufacturing method
Sébastien Becker, Grenoble (FR)
Assigned to Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed by Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed on May 12, 2022, as Appl. No. 17/743,364.
Claims priority of application No. 2105161 (FR), filed on May 18, 2021.
Prior Publication US 2022/0375914 A1, Nov. 24, 2022
Int. Cl. H01L 25/16 (2023.01); H01L 23/00 (2006.01)
CPC H01L 25/167 (2013.01) [H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12043 (2013.01)] 14 Claims
OG exemplary drawing
 
1. Optoelectronic device manufacturing method, comprising the steps of:
a) forming a photonic device comprising a plurality of photonic components formed inside and on top of a stack of one or a plurality of semiconductor layers coating a first substrate;
b) forming an electronic device comprising a semiconductor layer coating a second substrate;
c) after steps a) and b), bonding the electronic device to the upper surface of the photonic device by direct bonding, and then removing the second substrate;
d) after step c), forming, on the surface side of the electronic device opposite to the photonic device, electric connection metallizations contacting electronic components of the electronic device and the photonic components,
the method further comprising:
after step a) and before step c), a step of deposition of a metal layer continuously extending over the entire upper surface of the photonic device; and
after step c), a step of forming, from the surface of the electronic device opposite to the photonic device, of a plurality of insulating trenches vertically extending through the electronic device and the metal layer, said insulating trenches delimiting in the metal layer a plurality of electrodes electrically insulated from one another,
wherein step a) comprises a step of transfer and bonding of a first active photonic stack onto a second active photonic stack, the method further comprising, after the bonding of the first active photonic stack to the second active photonic stack and before step c), a step of forming of an insulated conductive via crossing the first active photonic stack and contacting the second active photonic stack.